Astron. Astrophys. 321, 293-304 (1997)
SiO production in interstellar shocks
*
P. Schilke 1,
C.M. Walmsley 2,
G. Pineau des Forêts 3 and
D.R. Flower 4
1 I. Physikalisches Institut der Universität zu
Köln, Zülpicher Str. 77, D-50937 Köln, Germany
2 Osservatorio di Arcetri, Largo E. Fermi 5, I-50125
Firenze, Italy
3 DAEC, Observatoire de Paris, F-92195 Meudon Principal
Cedex, France
4 Physics Department, The University, Durham DH1 3LE,
UK
Received 22 April 1996 / Accepted 19 August 1996
Abstract
We study the production of SiO in the gas phase of molecular
outflows, through the sputtering of Si-bearing material in grains. The
sputtering is driven by neutral particle impact on charged grains in
C-type shocks, at the speed corresponding to ambipolar diffusion.
Shock speeds in the range and preshock densities
have been investigated. Sputtering of Si-bearing
material in both the cores and the mantles of the grains is
considered. We find that, for of approximately
25 km s-1 and of the order
cm-3, column densities of SiO similar
to those observed in molecular outflow regions can be generated by
either mechanism. Impact by particles heavier than helium dominates
the core-sputtering process for shock velocities of this order. The
profiles of rotational transitions of SiO are computed and compared
with observations of molecular outflows.
Key words: molecular
processes
shock waves
ISM: abundances; jets and outflows; molecules
* Tables 1 and 2 are available in electronic form at CDS via ftp 130.79.128.5 or http://cdsweb.u-strasbg.fr/Abstract.html
Send offprint requests to: G. Pineau des Forêts
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© European Southern Observatory (ESO) 1997
Online publication: June 30, 1998
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